z-logo
open-access-imgOpen Access
Comment on ‘‘Carrier concentration and activation energy in heavily donor-doped silicon’’ [J. Appl. Phys. 6 1, 591 (1987)]
Author(s) -
G. F. Neumark
Publication year - 1988
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.341896
Subject(s) - range (aeronautics) , doping , work (physics) , set (abstract data type) , energy (signal processing) , statistical physics , silicon , theoretical physics , mathematical economics , physics , mathematics , computer science , thermodynamics , condensed matter physics , quantum mechanics , materials science , optoelectronics , composite material , programming language

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom