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Erratum: “Dielectric function of hydrogenated amorphous silicon near the optical absorption edge” [J. Appl. Phys. 106, 073110 (2009)]
Author(s) -
E. Malainho,
M. I. Vasilevskiy,
Pedro Alpuim,
Sergej Filonovich
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3415554
Subject(s) - dielectric function , amorphous silicon , absorption edge , materials science , silicon , enhanced data rates for gsm evolution , absorption (acoustics) , dielectric , amorphous solid , condensed matter physics , optoelectronics , physics , chemistry , crystalline silicon , crystallography , composite material , band gap , telecommunications , computer science

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