Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence | Zendy

Bianchi Méndez | Zendy; J. Piqueras | Zendy; F. Domı́nguez-Adame | Zendy; N. de Diego | Zendy

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Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence

Author(s) -

Bianchi Méndez,

J. Piqueras,

F. Domı́nguez-Adame,

N. de Diego

Publication year - 1988

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.341269

Subject(s) - cathodoluminescence , vacancy defect , wafer , materials science , dislocation , impurity , doping , channelling , positron , annihilation , crystallographic defect , scanning electron microscope , positron annihilation , analytical chemistry (journal) , condensed matter physics , molecular physics , optoelectronics , electron , chemistry , physics , nuclear physics , luminescence , composite material , ion , organic chemistry , chromatography

Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes

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