Spatial distribution of vacancy defects in GaP wafers | Zendy

F. Domı́nguez-Adame | Zendy; J. Piqueras | Zendy; N. de Diego | Zendy; J. Llopis | Zendy

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Spatial distribution of vacancy defects in GaP wafers

Author(s) -

F. Domı́nguez-Adame,

J. Piqueras,

N. de Diego,

J. Llopis

Publication year - 1988

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.340994

Subject(s) - cathodoluminescence , vacancy defect , wafer , materials science , dislocation , annihilation , crystallographic defect , positron annihilation , condensed matter physics , molecular physics , optoelectronics , positron , electron , chemistry , physics , composite material , nuclear physics , luminescence

Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared

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