Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks | Zendy

C. Wiemer | Zendy; L. Lamagna | Zendy; S. Baldovino | Zendy; Michele Perego | Zendy; Sylvie SchammChardon | Zendy; PierreEugène Coulon | Zendy; O. Salicio | Zendy; G. Congedo | Zendy; Sabina Spiga | Zendy; M. Fanciulli | Zendy

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Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

Author(s) -

C. Wiemer,

L. Lamagna,

S. Baldovino,

Michele Perego,

Sylvie SchammChardon,

PierreEugène Coulon,

O. Salicio,

G. Congedo,

Sabina Spiga,

M. Fanciulli

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3400213

Subject(s) - dielectric , atomic layer deposition , doping , materials science , annealing (glass) , polarizability , equivalent oxide thickness , oxide , high κ dielectric , gate dielectric , optoelectronics , analytical chemistry (journal) , thin film , gate oxide , nanotechnology , chemistry , metallurgy , electrical engineering , molecule , organic chemistry , engineering , transistor , chromatography , voltage

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