Quantum efficiency and oscillator strength of site-controlled InAs quantum dots | Zendy

F. Albert | Zendy; Søren Stobbe | Zendy; Christian Schneider | Zendy; Tobias Heindel | Zendy; S. Reitzenstein | Zendy; Sven Höfling | Zendy; Peter Lodahl | Zendy; L. Worschech | Zendy; A. Forchel | Zendy

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Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

Author(s) -

F. Albert,

Søren Stobbe,

Christian Schneider,

Tobias Heindel,

S. Reitzenstein,

Sven Höfling,

Peter Lodahl,

L. Worschech,

A. Forchel

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3393988

Subject(s) - quantum dot , photoluminescence , oscillator strength , spectroscopy , materials science , optoelectronics , quantum efficiency , radiative transfer , molecular physics , atomic physics , physics , spectral line , optics , quantum mechanics

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (47±14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface.

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