Carrier dynamics in quantum wells behaving as giant traps | Zendy

Nacer Debbar | Zendy; P. Bhattacharya | Zendy

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Carrier dynamics in quantum wells behaving as giant traps

Author(s) -

Nacer Debbar,

P. Bhattacharya

Publication year - 1987

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.339226

Subject(s) - quantum well , molecular beam epitaxy , electron , arrhenius equation , conduction band , quantum , condensed matter physics , heterojunction , materials science , chemistry , physics , epitaxy , activation energy , nanotechnology , quantum mechanics , laser , layer (electronics)

An Arrhenius‐type of expression is derived for the emission rate of electrons from a quantum well on the basis of detailed balance principles. The formulation is applied to a 150‐Å In0.2Ga0.8As/Al0.16Ga0.84As strained single quantum well grown by molecular beam epitaxy. From an analysis of the data it is possible to estimate the conduction band offset ΔEc, which may be extremely useful for strained systems

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