Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy | Zendy

Sanjai Kumar | Zendy; Prashant Singh | Zendy; S.R. Dhariwal | Zendy

Open Access

Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy

Author(s) -

Sanjai Kumar,

Prashant Singh,

S.R. Dhariwal

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3385779

Subject(s) - passivation , wafer , carrier lifetime , materials science , recombination , silicon , dielectric spectroscopy , photoconductivity , microwave , optoelectronics , hydrogen , spectroscopy , analytical chemistry (journal) , chemistry , nanotechnology , layer (electronics) , electrode , physics , biochemistry , organic chemistry , quantum mechanics , chromatography , electrochemistry , gene

Impedance spectroscopy is used to study the effect of surface passivation on minority carrier lifetimes. The technique allows measurement of generation and recombination lifetimes separately. Induced p+-p-n structures are prepared by depositing semitransparent layers of high and low work function metals (Pd and Al, respectively) on the two sides of silicon wafers. Hydrogen adsorption property of Pd surface has been utilized for passivation. The generation lifetimes remain almost unaffected but recombination lifetimes enhance many folds after passivations which are in agreement with values obtained by microwave photoconductive decay technique after chemical passivation. Variations are analyzed for estimation of bulk recombination lifetime

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