Charge-state changes of substitutional nitrogen impurities in silicon induced by additional impurities and defects | Zendy

Hisayoshi Itoh | Zendy; Kouichi Murakami | Zendy; K. Takita | Zendy; Kohzoh Masuda | Zendy

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Charge-state changes of substitutional nitrogen impurities in silicon induced by additional impurities and defects

Author(s) -

Hisayoshi Itoh,

Kouichi Murakami,

K. Takita,

Kohzoh Masuda

Publication year - 1987

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.338351

Subject(s) - impurity , doping , silicon , materials science , electron paramagnetic resonance , atomic physics , ion , analytical chemistry (journal) , chemistry , condensed matter physics , nuclear magnetic resonance , physics , optoelectronics , organic chemistry , chromatography , metallurgy

Charge states of substitutional N impurities (Ns) in Si are found to be controllable by doping with P, B, and O impurities in N-ion implanted and subsequently pulsed-laser annealed Si (Si:N system). Electron-spin resonance measurements of the Si:N system doped with P, B, or O impurities show that the spin density of neutral Ns (N⁰_s) decreases because of doping with these impurities. Compensation by multiple doping with equal amounts of P and B impurities leaves the density of N⁰_s essentially unchanged. These results yield evidence for charge-state changes of Ns due to the Fermi level shift. Oxygen doping is found to introduce donors. Three charge states, i.e., positive (N⁺_s) , neutral (N⁰_s) , and negative (N^-_s) are assigned to off-center substitutional N in Si

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