Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation | Zendy

P.J. Sellin | Zendy; G. Prekas | Zendy; J. Franc | Zendy; R. Grill | Zendy

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Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation

Author(s) -

P.J. Sellin,

G. Prekas,

J. Franc,

R. Grill

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3373526

Subject(s) - electric field , pockels effect , space charge , irradiation , materials science , semiconductor , field (mathematics) , charge carrier , distortion (music) , analytical chemistry (journal) , condensed matter physics , chemistry , optoelectronics , electron , physics , amplifier , cmos , chromatography , pure mathematics , mathematics , quantum mechanics , nuclear physics

Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures <270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.

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