Open AccessModeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator
Author(s) -
E. M. Bazizi,
PierFrancesco Fazzini,
A. Pakfar,
C. Tavernier,
B. Vandelle,
H. Kheyrandish,
S. Paul,
W. Lerch,
F. Cristiano
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3369160
Subject(s) - silicon on insulator , silicon , materials science , boron , diffusion , chemical vapor deposition , insulator (electricity) , recombination , transient (computer programming) , ion , optoelectronics , chemical physics , molecular physics , chemistry , biochemistry , physics , organic chemistry , gene , thermodynamics , computer science , operating system
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