Open AccessErratum: “Angle-resolved phototelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals” [J. Appl. Phys. 104, 114112 (2008)]
Author(s) -
Takashi Aratani,
Masaaki Higuchi,
Shigetoshi Sugawa,
Eiji Ikenaga,
Jiro Ushio,
Hiroshi Nohira,
Tomoyuki Suwa,
Akinobu Teramoto,
Tadahiro Ohimi,
Takeo Hattori
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3366705
Subject(s) - silicon nitride , radical , hydrogen , nitrogen , nitride , silicon , materials science , chemistry , nanotechnology , optoelectronics , organic chemistry , layer (electronics)
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