Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage | Zendy

Wanghua Chen | Zendy; R. Lardé | Zendy; E. Cadel | Zendy; Tao Xu | Zendy; B. Grandidier | Zendy; J. P. Nys | Zendy; Didier Stiévenard | Zendy; P. Pareige | Zendy

Open Access

Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

Author(s) -

Wanghua Chen,

R. Lardé,

E. Cadel,

Tao Xu,

B. Grandidier,

J. P. Nys,

Didier Stiévenard,

P. Pareige

Publication year - 2010

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3359648

Subject(s) - tapering , nanowire , substrate (aquarium) , catalysis , silicon , partial pressure , silane , materials science , chemical vapor deposition , diffusion , molecular beam epitaxy , chemical engineering , nanotechnology , atom (system on chip) , deposition (geology) , growth rate , chemical physics , chemistry , epitaxy , metallurgy , composite material , layer (electronics) , thermodynamics , organic chemistry , computer graphics (images) , mathematics , oceanography , oxygen , computer science , engineering , biology , embedded system , paleontology , geometry , physics , sediment , geology

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