Open AccessErratum: Measurement of electron mobility in epitaxial heavily phosphorus‐doped silicon [J. Appl. Phys. 56, 2250 (1984)]
Author(s) -
Jesús A. del Alamo,
R.M. Swanson
Publication year - 1985
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.335508
Subject(s) - epitaxy , silicon , doping , electron , phosphorus , materials science , electron mobility , condensed matter physics , atomic physics , optoelectronics , nanotechnology , physics , nuclear physics , metallurgy , layer (electronics)
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