Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon | Zendy

Jun Xu | Zendy; P.M. Bronsveld | Zendy; G. Boom | Zendy; J. Th. M. De Hosson | Zendy

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Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

Author(s) -

Jun Xu,

P.M. Bronsveld,

G. Boom,

J. Th. M. De Hosson

Publication year - 1984

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.332958

Subject(s) - stacking , silicon , dislocation , materials science , crystallography , stacking fault , oxide , ion implantation , layer (electronics) , condensed matter physics , chemistry , optoelectronics , metallurgy , composite material , ion , physics , organic chemistry

Three implantation effects were investigated in floating‐zone‐grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation‐induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3[111] Frank dislocations into 1/2[110] perfect dislocations due to the interaction with 1/6[112] Shockley partials; (c) the effect of a combined F+ and Cl+ implantation of dislocation motion. Notwithstanding the limited magnification of double‐crystal x‐ray topography it proves to be a valuable technique for determination of the effects of implantation, as removal of F; the oxidation layer is unnecessary for observation of the oxidation‐induced stacking faults. Moreover, the role of the oxide layer in the Si‐SiO2 interface can be followed more appropriately.

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