Open AccessTheoretical gain of strained GeSn0.02/Ge1−x−y′SixSny′ quantum well laser
Author(s) -
Yuan-Hui Zhu,
Qiang Xu,
W. J. Fan,
Jianwei Wang
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3329424
Subject(s) - quantum well , condensed matter physics , effective mass (spring–mass system) , thermal conduction , band gap , hamiltonian (control theory) , electron , semiconductor , barrier layer , materials science , electronic band structure , electronic structure , laser , rectangular potential barrier , physics , layer (electronics) , optoelectronics , optics , nanotechnology , quantum mechanics , mathematical optimization , mathematics , composite material
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