Open AccessSubstitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface
Author(s) -
D. K. Sadana,
J. Washburn,
C. W. Magee
Publication year - 1983
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.332412
Subject(s) - amorphous solid , annealing (glass) , recrystallization (geology) , impurity , ion implantation , materials science , transmission electron microscopy , silicon , secondary ion mass spectrometry , crystalline silicon , analytical chemistry (journal) , crystallography , ion , chemical physics , chemistry , nanotechnology , metallurgy , paleontology , organic chemistry , chromatography , biology
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