Open AccessErratum: A kinetic study of the plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas [J. Appl. Phys. 53, 2923 (1982)]
Author(s) -
M. J. Kushner
Publication year - 1982
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.331663
Subject(s) - etching (microfabrication) , plasma , plasma etching , kinetic energy , materials science , reactive ion etching , process (computing) , atomic physics , physics , nanotechnology , nuclear physics , computer science , quantum mechanics , layer (electronics) , operating system
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