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Erratum: “Transparent resistive random access memory and its characteristics for nonvolatile resistive switching” [Appl. Phys. Lett. 93, 223505 (2008)]
Author(s) -
Jung Won Seo,
JaeWoo Park,
Koeng Su Lim,
Ji-Hwan Yang,
Sang Jung Kang
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3306734
Subject(s) - resistive random access memory , resistive touchscreen , non volatile memory , materials science , optoelectronics , random access memory , random access , condensed matter physics , nanotechnology , computer science , physics , electrode , quantum mechanics , computer hardware , computer network , operating system

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