Open AccessApplication of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor
Author(s) -
Jung-Hui Tsai,
Yuan-Hong Lee,
Ning-Feng Dale,
Jhih-Syuan Sheng,
Yung-Chun Ma,
Sheng-Shiun Ye
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3302462
Subject(s) - superlattice , common emitter , bipolar junction transistor , optoelectronics , materials science , heterostructure emitter bipolar transistor , transistor , quantum tunnelling , gallium arsenide , input offset voltage , voltage , electrical engineering , amplifier , operational amplifier , cmos , engineering
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