Ternary logic implemented on a single dopant atom field effect silicon transistor | Zendy

Michael L. Klein | Zendy; Jan A. Mol | Zendy; J. Verduijn | Zendy; G. P. Lansbergen | Zendy; Sven Rogge | Zendy; R. D. Levine | Zendy; F. Remacle | Zendy

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Ternary logic implemented on a single dopant atom field effect silicon transistor

Author(s) -

Michael L. Klein,

Jan A. Mol,

J. Verduijn,

G. P. Lansbergen,

Sven Rogge,

R. D. Levine,

F. Remacle

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3297906

Subject(s) - ternary operation , transconductance , dopant , transistor , field effect transistor , materials science , optoelectronics , logic gate , atom (system on chip) , silicon , electrical engineering , voltage , doping , computer science , engineering , embedded system , programming language

We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row

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