Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers
Author(s) -
H. Ch. Alt,
Peter Messerer,
Lutz Kirste,
K. Köhler,
H. Riechert,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295567
Subject(s) - fourier transform infrared spectroscopy , hydrogen , absorption (acoustics) , nitrogen , infrared spectroscopy , spectroscopy , analytical chemistry (journal) , ion , absorption spectroscopy , mass spectrometry , nitride , chemistry , secondary ion mass spectrometry , mass fraction , secondary ion mass spectroscopy , hydrogen atom , fourier transform spectroscopy , materials science , physics , optics , silicon , layer (electronics) , organic chemistry , alkyl , chromatography , quantum mechanics , composite material
Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H(+) or D(+) ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen
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