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Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H(+) or D(+) ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen

Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers