Defect Levels of the Ge Dangling Bond Defect
Author(s) -
Peter Broqvist,
Audrius Alkauskas,
Alfredo Pasquarello,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295564
Subject(s) - dangling bond , germanium , silicon , materials science , valence (chemistry) , electron paramagnetic resonance , valence band , condensed matter physics , molecular physics , atomic physics , band gap , chemistry , optoelectronics , nuclear magnetic resonance , physics , organic chemistry
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