Open AccessCurrent Carriers Transport In High Uniaxially Strained Silicon
Author(s) -
V. V. Kolomoets,
V. V. Baidakov,
А. В. Федосов,
A. E. Gorin,
V. M. Ermakov,
D. V. Korbutyak,
E. Liarokapis,
Galina Gromova,
B. Orasgulyev,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295551
Subject(s) - transverse plane , anisotropy , materials science , silicon , electron , condensed matter physics , effective mass (spring–mass system) , electron mobility , transistor , optoelectronics , optics , physics , structural engineering , quantum mechanics , engineering , voltage
We present the tensoresistivity effects which demonstrate the pressure-induced increase of the mobility of electrons and holes at certain orientations of uniaxial pressure X with reference to the [100] crystallographic axis. The uniaxially strained channels occur in silicon n-MOS-transistors and p-MOS transistors [1, 2]. Both longitudinal tensoresistivity (TR) and transverse TR investigation in high uniaxially strained n-Si(P) and p-Si(B) are presented. In n-Si the change of the longitudinal TR and transverse TR at X ∥ [100] is determined by both the change of f-transition probability with increasing pressure and the redistribution of electrons between the valleys with the effective mass m∥ (longitudinal TR) and m⊥ (transverse TR). It is shown that the strong anisotropy of longitudinal TR and transverse TR are caused by pressure-induced change of isoenergetic surface shape, i.e. by the change of heavy holes effective mass and its anisotropy. © 2009 American Institute of Physics
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