Temperature Dependence Of Current-Voltage Characteristics Of Pt∕InN Schottky Barrier Diodes | Zendy

Victor-Tapio Rangel-Kuoppa | Zendy; Sami Suihkonen | Zendy; M. Sopanen | Zendy; Harri Lipsanen | Zendy; Marília Caldas | Zendy; Nélson Studart | Zendy

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Temperature Dependence Of Current-Voltage Characteristics Of Pt∕InN Schottky Barrier Diodes

Author(s) -

Victor-Tapio Rangel-Kuoppa,

Sami Suihkonen,

M. Sopanen,

Harri Lipsanen,

Marília Caldas,

Nélson Studart

Publication year - 2010

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.3295546

Subject(s) - thermionic emission , saturation current , ohmic contact , equivalent series resistance , schottky barrier , schottky diode , atmospheric temperature range , diode , materials science , condensed matter physics , saturation (graph theory) , activation energy , schottky effect , optoelectronics , chemistry , voltage , analytical chemistry (journal) , thermodynamics , electrical engineering , physics , nanotechnology , electron , mathematics , organic chemistry , layer (electronics) , quantum mechanics , combinatorics , chromatography , engineering

The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.Peer reviewe

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