Open AccessMicro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B
Author(s) -
Emine Selcuk,
G. J. Hamhuis,
R. Nötzel,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295544
Subject(s) - quantum dot , photoluminescence , materials science , optoelectronics , nanotechnology
Micro‐photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high‐sensitivity sensor applications.
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