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Micro‐photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high‐sensitivity sensor applications.

Micro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B