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We analyze the complex turn-on behavior of semiconductor quantum-dot lasers which is determined by the nonlinearity of the carrier-carrier scattering rates. Our model consists of a combination between a microscopic approach used for calculating the non-radiative scattering rates and a rate equation model used for modeling the complex dynamic turn- on behavior. We show that depending on the value of the optical confinement factor there are two different dynamic regimes which differ by the frequency of the relaxation oscillations. In the damped regime hole and electron dynamics in the dots decouple leading to the small cutoff frequency of these lasers.

The Role of Decoupled Electron and Hole Dynamics in the Turn-on Behavior of Semiconductor Quantum-Dot Lasers