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The Role of Decoupled Electron and Hole Dynamics in the Turn-on Behavior of Semiconductor Quantum-Dot Lasers
Author(s) -
Kathy Lüdge,
Ermin Malić,
Eckehard Schöll,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295512
Subject(s) - physics , semiconductor laser theory , quantum dot , quantum dot laser , rate equation , laser , scattering , semiconductor , relaxation (psychology) , electron , quantum well , cutoff frequency , condensed matter physics , optoelectronics , optics , quantum mechanics , psychology , social psychology , kinetics
We analyze the complex turn-on behavior of semiconductor quantum-dot lasers which is determined by the nonlinearity of the carrier-carrier scattering rates. Our model consists of a combination between a microscopic approach used for calculating the non-radiative scattering rates and a rate equation model used for modeling the complex dynamic turn- on behavior. We show that depending on the value of the optical confinement factor there are two different dynamic regimes which differ by the frequency of the relaxation oscillations. In the damped regime hole and electron dynamics in the dots decouple leading to the small cutoff frequency of these lasers.

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