Control of Ferromagnetism in a (Ga, Mn)As—Based Multiferroic System via a Ferroelectric Gate | Zendy

S. W. E. Riester | Zendy; Igor Stolichnov | Zendy; H. J. Trodahl | Zendy; N. Setter | Zendy; A. W. Rushforth | Zendy; K. W. Edmonds | Zendy; R. P. Campion | Zendy; C. T. Foxon | Zendy; B. L. Gallagher | Zendy; T. Jungwirth | Zendy; Marília Caldas | Zendy; Nélson Studart | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Control of Ferromagnetism in a (Ga, Mn)As—Based Multiferroic System via a Ferroelectric Gate

Author(s) -

S. W. E. Riester,

Igor Stolichnov,

H. J. Trodahl,

N. Setter,

A. W. Rushforth,

K. W. Edmonds,

R. P. Campion,

C. T. Foxon,

B. L. Gallagher,

T. Jungwirth,

Marília Caldas,

Nélson Studart

Publication year - 2010

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.3295510

Subject(s) - ferroelectricity , ferromagnetism , curie temperature , materials science , hysteresis , condensed matter physics , field effect transistor , transistor , poling , multiferroics , optoelectronics , curie , electrical engineering , voltage , physics , engineering , dielectric

We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and thus also the altered ferromagnetic behavior, persists for periods of more than a week. T-C control is demonstrated by resistance, magnetotransport and hysteresis measurements.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research