Open AccessGaN Surface Quantum Well In AlGaN∕GaN Transistor Heterostructure Studied By Contactless Electroreflectance
Author(s) -
R. Kudrawiec,
M. Gładysiewicz,
J. Misiewicz,
R. Paszkiewicz,
B. Pszkiewicz,
M. Tłaczała,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295398
Subject(s) - heterojunction , optoelectronics , materials science , resonance (particle physics) , quantum well , transistor , effective mass (spring–mass system) , condensed matter physics , surface (topology) , wide bandgap semiconductor , atomic physics , physics , optics , voltage , quantum mechanics , laser , geometry , mathematics
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