English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We have investigated transport properties in InAs/AlGaSbAs and InAsSb/AlInSb quantum wells (QW) in the quantum Hall regime. The carrier density in InAs QW is tuned by using a front gate bias, and the contour plot of resistance as a function of perpendicular magnetic field and gate voltage reveals the spin‐resolved subband‐Landau‐level coupling in tilted magnetic fields. An anomalous transport occurred by the coexistence of electrons and holes in the system has been observed both in InAs and InAsSb QWs.

Quantum Hall Effect and Spin Resolved Anti-crossing of Landau Levels in AlGaSbAs∕InAs and AlInSb∕InAsSb Quantum Wells