Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements | Zendy

H. C. Neitzert | Zendy; Marinus Kunst | Zendy; Marília Caldas | Zendy; Nélson Studart | Zendy

Open Access

Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements

Author(s) -

H. C. Neitzert,

Marinus Kunst,

Marília Caldas,

Nélson Studart

Publication year - 2010

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.3295388

Subject(s) - photoconductivity , materials science , amorphous silicon , optoelectronics , silicon , microwave , in situ , amorphous solid , conductivity , transient (computer programming) , layer (electronics) , thin film , crystalline silicon , composite material , nanotechnology , chemistry , physics , organic chemistry , quantum mechanics , computer science , operating system

The monitoring of the microwave reflection changes after pulsed laser illumination enables the in-situ characterization of important optical and electrical material parameters during the growth of intrinsic hydrogenated amorphous silicon on low conductivity substrates

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research