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A theoretical analysis is given of an electron—hole transition observed in GaAs/AlGaAs heterostructures δ‐doped with shallow acceptors in the GaAs channel. The transition involves a 2D electron and a 3D acceptor‐localized hole. The wave functions of a bulk Be acceptor were calculated within the spherical model with both the s‐like and d‐like parts of the envelope taken into account. The electron envelope wave functions resulted from self‐consistent calculations of the electrostatic potential and were dependent on the 2D electron concentration, ns. We show that: i) including the d‐like part of the acceptor envelope relaxes the selection rules of free‐to‐bound transitions at k = 0; ii) in the magnetic field, the selection rules depend on the number of the electron Landau level; iii) the ratio of the intensity of the strongest transitions in both circular polarizations is essentially different from 3:1, and strongly depends on ns. These results show that proper description of the transition analyzed must tak...

Optical Γ[sub 6]→Γ[sub 8] Free-to-Bound Transition in Acceptor δ-doped Single Heterostructure—Theoretical Analysis