Polarized Photoluminescence From Nonpolar (11–20) (Ga,In)N Multi-Quantum-Wells
Author(s) -
T. Gühne,
Z. Bougrioua,
M. Némoz,
Radosław Chmielowski,
T. Bretag,
B. Gil,
M. Leroux,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295362
Subject(s) - photoluminescence , orthorhombic crystal system , exciton , quantum well , polarization (electrochemistry) , materials science , condensed matter physics , molecular physics , chemistry , crystal structure , optoelectronics , physics , laser , optics , crystallography
International audienceNonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an orthorhombic distortion of the crystal and an increased electron-hole exchange energy relative to GaN. This increase is in agreement with calculations on the effect of confinement on the exciton exchange splitting
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