Open AccessCollective effects in SiGe∕Si quantum wells
Author(s) -
V. S. Bagaev,
V. S. Krivobok,
С. Н. Николаев,
А. В. Новиков,
Е. Е. Онищенко,
V. V. Zaĭtsev,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - Uncategorized
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295361
Subject(s) - exciton , quantum well , photoluminescence , plasma , condensed matter physics , mott transition , electron density , materials science , electron , electron hole , range (aeronautics) , biexciton , silicon , optoelectronics , physics , optics , laser , superconductivity , quantum mechanics , composite material , hubbard model
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