Open AccessEnergy levels of candidate defects at SiC∕SiO[sub 2] interfaces
Author(s) -
Fabien Devynck,
Audrius Alkauskas,
Peter Broqvist,
Alfredo Pasquarello,
Marília Caldas,
Nélson Studart
Publication year - 2010
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3295319
Subject(s) - materials science , band gap , wide bandgap semiconductor , conduction band , condensed matter physics , energy (signal processing) , engineering physics , optoelectronics , physics , nuclear physics , quantum mechanics , electron
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom