Anomalously enhanced Raman scattering from longitudinal optical phonons on Ag-nanoparticle-covered GaN and ZnO | Zendy

C. Y. Liu | Zendy; Mykhaylo M. Dvoynenko | Zendy; M. Y. Lai | Zendy; TzuYi Chan | Zendy; Y. R. Lee | Zendy; J.-K. Wang | Zendy; YuhLin Wang | Zendy

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Anomalously enhanced Raman scattering from longitudinal optical phonons on Ag-nanoparticle-covered GaN and ZnO

Author(s) -

C. Y. Liu,

Mykhaylo M. Dvoynenko,

M. Y. Lai,

TzuYi Chan,

Y. R. Lee,

J.-K. Wang,

YuhLin Wang

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3291041

Subject(s) - raman scattering , wurtzite crystal structure , raman spectroscopy , materials science , phonon , wide bandgap semiconductor , x ray raman scattering , condensed matter physics , scattering , semiconductor , optoelectronics , nanoparticle , nanotechnology , optics , zinc , physics , metallurgy

The authors report experimental studies of surface-enhanced Raman scattering (SERS) of wurtzite-type GaN and ZnO crystalline samples covered with Ag-nanoparticles. The longitudinal optical phonons consistently exhibit unusually intense Raman enhancement in comparison with other phonons. The anomaly is interpreted by a proposed model based on a resonant Raman scattering process assisted by metal-induced gap states at the Ag/GaN and Ag/ZnO interfaces. This study suggests that SERS of lattice vibrations in inorganic semiconductors is sensitive to their propagation nature, providing a progressive perspective view on electron-mediated enhanced Raman scattering.

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