Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon | Zendy

Bianca Lim | Zendy; AnYao Liu | Zendy; Daniel Macdonald | Zendy; Karsten Bothe | Zendy; Jan Schmidt | Zendy

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Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

Author(s) -

Bianca Lim,

AnYao Liu,

Daniel Macdonald,

Karsten Bothe,

Jan Schmidt

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3272918

Subject(s) - boron , dopant , silicon , oxygen , doping , materials science , recombination , activation energy , dopant activation , photochemistry , chemistry , optoelectronics , biochemistry , organic chemistry , gene

The boron-oxygen recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be permanently deactivated by illumination at elevated temperature. In this study, we examine the impact of dopant compensation on the deactivation process. The experimental results show that the deactivation rate depends inversely on the total boron concentration instead of the net doping concentration, suggesting that boron is directly involved in the deactivation process. A linear dependence of the activation energy on the total boron concentration further supports this conclusion.

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