Power-scaling performance of a three-dimensional tritium betavoltaic diode | Zendy

Baojun Liu | Zendy; Kevin P. Chen | Zendy; Nazir P. Kherani | Zendy; S. Źükotyński | Zendy

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Power-scaling performance of a three-dimensional tritium betavoltaic diode

Author(s) -

Baojun Liu,

Kevin P. Chen,

Nazir P. Kherani,

S. Źükotyński

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3272105

Subject(s) - microporous material , diode , materials science , tritium , planar , scaling , etching (microfabrication) , foil method , tritium illumination , optoelectronics , nuclear engineering , nuclear physics , nanotechnology , composite material , physics , geometry , mathematics , engineering , computer graphics (images) , layer (electronics) , computer science

Three-dimensional diodes fabricated by electrochemical etching are exposed to tritium gas at pressures from 0.05 to 33 atm at room temperature to examine its power scaling performance. It is shown that the three-dimensional microporous structure overcomes the self-absorption limited saturation of beta flux at high tritium pressures. These results are contrasted against the three-dimensional device powered in one instance by tritium absorbed in the near surface region of the three-dimensional microporous network, and in another by a planar scandium tritide foil. These findings suggest that direct tritium occlusion in the near surface of three-dimensional diode can improve the specific power production. © 2009 American Institute of Physics

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