Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition | Zendy

Shree Prakash Tiwari | Zendy; Xiaohong Zhang | Zendy; William J. Potscavage | Zendy; Bernard Kippelen | Zendy

Open Access

Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

Author(s) -

Shree Prakash Tiwari,

Xiaohong Zhang,

William J. Potscavage,

Bernard Kippelen

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3269579

Subject(s) - atomic layer deposition , materials science , threshold voltage , optoelectronics , field effect transistor , subthreshold slope , dielectric , electron mobility , gate dielectric , transistor , deposition (geology) , analytical chemistry (journal) , layer (electronics) , subthreshold conduction , hafnium , high κ dielectric , organic field effect transistor , voltage , chemistry , nanotechnology , electrical engineering , zirconium , paleontology , engineering , sediment , metallurgy , biology , chromatography

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research