Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress | Zendy

Xiaohong Zhang | Zendy; Shree Prakash Tiwari | Zendy; SungJin Kim | Zendy; Bernard Kippelen | Zendy

Open Access

Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress

Author(s) -

Xiaohong Zhang,

Shree Prakash Tiwari,

SungJin Kim,

Bernard Kippelen

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3269577

Subject(s) - pentacene , materials science , dielectric , gate dielectric , threshold voltage , subthreshold slope , atomic layer deposition , optoelectronics , capacitance , field effect transistor , transistor , high κ dielectric , stress (linguistics) , electron mobility , organic field effect transistor , hafnium , layer (electronics) , thin film transistor , voltage , electrical engineering , chemistry , electrode , nanotechnology , philosophy , linguistics , engineering , zirconium , metallurgy

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