Open AccessEpitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer
Author(s) -
Bo Xiao,
Hongrui Liu,
V. Avrutin,
Jacob H. Leach,
Emmanuel Rowe,
Huiyong Liu,
Ü. Özgür,
H. Morkoç̌,
Wontae Chang,
L. M. B. Alldredge,
S. W. Kirchoefer,
J.M. Pond
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3266862
Subject(s) - sapphire , materials science , epitaxy , molecular beam epitaxy , thin film , sputter deposition , optoelectronics , dielectric , diffraction , sputtering , electron diffraction , layer (electronics) , optics , composite material , nanotechnology , laser , physics
High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (112¯0) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30°, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [112¯0] and BST [110]/MgO [110]//ZnO [11¯00]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.
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