Formation of defects in boron nitride by low energy ion bombardment
Author(s) -
Robert Peter,
Ana Božanić,
M. Petravić,
Ying Chen,
Liang-Jen Fan,
YawWen Yang
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3253576
Subject(s) - xanes , boron , nitrogen , boron nitride , argon , materials science , ion , nitride , phase (matter) , absorption (acoustics) , analytical chemistry (journal) , x ray absorption fine structure , interstitial defect , spectral line , k edge , crystallography , atomic physics , chemistry , spectroscopy , layer (electronics) , nanotechnology , doping , physics , organic chemistry , optoelectronics , astronomy , chromatography , quantum mechanics , composite material
Formation of defects in hexagonal and cubic boron nitride (h -BN and c -BN, respectively) under low-energy argon or nitrogen ion-bombardment has been studied by near-edge x-ray absorption fine structure (NEXAFS) around boron and nitrogen K -edges. Breaking of B-N bonds for both argon and nitrogen bombardment and formation of nitrogen vacancies, VN, has been identified from the B K -edge of both h -BN and c -BN, followed by the formation of molecular nitrogen, N2, at interstitial positions. The presence of N 2 produces an additional peak in photoemission spectra around N 1s core level and a sharp resonance in the low-resolution NEXAFS spectra around N K -edge, showing the characteristic vibrational fine structure in high-resolution measurements. In addition, several new peaks within the energy gap of BN, identified by NEXAFS around B and N K -edges, have been assigned to boron or nitrogen interstitials, in good agreement with theoretical predictions. Ion bombardment destroys the cubic phase of c -BN and produces a phase similar to a damaged hexagonal phase. © 2009 American Institute of Physics.
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