Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography
Author(s) -
F. Vurpillot,
M. Gruber,
S. Duguay,
E. Cadel,
B. Déconihout,
Erik M. Secula,
David G. Seiler,
Rajinder P. Khosla,
Dan Herr,
C. Michael Garner,
Robert McDonald,
Alain C. Diebold
Publication year - 2009
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3251216
Subject(s) - atom probe , full width at half maximum , resolution (logic) , image resolution , silicon , materials science , iterative reconstruction , atom (system on chip) , tomography , evaporation , optics , semiconductor , sample (material) , doping , optoelectronics , physics , computer science , nanotechnology , artificial intelligence , thermodynamics , embedded system , transmission electron microscopy
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