Resistance changes induced by electron-spin resonance in ion-implanted Si : P system

K. Murakami and S. Namba, The Institute of Physical and Chemical Research, Wako-shi, Saitama, JapanN. Kishimoto, Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, JapanK. Masuda and K. Gamo, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, JapanThe ESR-induced changes in the dc resistance, Deltarho/rho|ESR, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The Deltarho/rho|ESR signals observed were a narrow line with a g value of 1.9988 for light-dose implantation and a new broad line with a little larger g value for heavy-dose implantation. The line shape of these Deltarho/rho|ESR signals was Lorentzian as well as the ESR signal, but the linewidth DeltaH1/2 of the broad Deltarho/rho|ESR signal was about 10 times as broad as the ESR linewidth. It is suggested that the anomalously broad line of Deltarho/rho|ESR originates from the transfer of the Zeeman energy absorbed by the localized donor electrons at the tail regions with low donor concentration (5×1017~2×1019 P/cm3) which act as Zeeman energy absorbers