Open AccessThermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)
Author(s) -
L. Lamagna,
C. Wiemer,
S. Baldovino,
Alessandro Molle,
Michele Perego,
Sylvie SchammChardon,
PierreEugène Coulon,
M. Fanciulli
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3227669
Subject(s) - materials science , atomic layer deposition , doping , annealing (glass) , passivation , dielectric , permittivity , tetragonal crystal system , analytical chemistry (journal) , thin film , oxide , layer (electronics) , optoelectronics , crystallography , chemistry , nanotechnology , metallurgy , crystal structure , chromatography
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