E centers in ternary Si1−x−yGexSny random alloys | Zendy

A. Chroneos | Zendy; Chao Jiang | Zendy; Robin W. Grimes | Zendy; Udo Schwingenschlögl | Zendy; H. Bracht | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

E centers in ternary Si1−x−yGexSny random alloys

Author(s) -

A. Chroneos,

Chao Jiang,

Robin W. Grimes,

Udo Schwingenschlögl,

H. Bracht

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3224894

Subject(s) - ternary operation , vacancy defect , atom (system on chip) , lattice (music) , materials science , condensed matter physics , density functional theory , k nearest neighbors algorithm , arsenic , alloy , crystallography , physics , chemistry , computational chemistry , metallurgy , computer science , artificial intelligence , acoustics , embedded system , programming language

Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1−x−yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research