Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope | Zendy

Michel Bosman | Zendy; Longdan Tang | Zendy; Jian Dong Ye | Zendy; Swee Tiam Tan | Zendy; Y. Zhang | Zendy; Vicki J. Keast | Zendy

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Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope

Author(s) -

Michel Bosman,

Longdan Tang,

Jian Dong Ye,

Swee Tiam Tan,

Y. Zhang,

Vicki J. Keast

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3222974

Subject(s) - electron energy loss spectroscopy , materials science , band gap , spectroscopy , raman spectroscopy , wide bandgap semiconductor , delocalized electron , nanoscopic scale , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , transmission electron microscopy , optics , physics , organic chemistry , chromatography , quantum mechanics

Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In₀․₂₅Ga₀․₇₅N quantum wells

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