Polarization retention of thin ferroelectricya capacitors | Zendy

Youn Jung Park | Zendy; Jiyoun Chang | Zendy; Seok Ju Kang | Zendy; Cheolmin Park | Zendy

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Polarization retention of thin ferroelectricya capacitors

Author(s) -

Youn Jung Park,

Jiyoun Chang,

Seok Ju Kang,

Cheolmin Park

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3216053

Subject(s) - capacitor , ferroelectricity , materials science , polarization (electrochemistry) , ferroelectric capacitor , polymer capacitor , thin film , amplitude , optoelectronics , non volatile memory , fluoride , retention time , voltage , electrical engineering , optics , chemistry , dielectric , nanotechnology , physics , electrolytic capacitor , inorganic chemistry , engineering , chromatography

Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) film capacitors with the writing pulse amplitude and time width of +/- 20 V and 1 ms, respectively, over 200 h at 80 degrees C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memoryopen8

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