Comments on ’’Effects of spatially inhomogeneous oxide charge distribution on the MOS capacitance-voltage characteristics’’
Author(s) -
M.J. McNutt,
C. T. Sah,
R. Van Overstraeten,
G. Declerck,
Paul A. Muls
Publication year - 1975
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.321472
Subject(s) - capacitor , capacitance , charge (physics) , oxide , materials science , voltage , condensed matter physics , optoelectronics , physics , electrode , quantum mechanics , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom