Microscale inverse acoustic band gap structure in aluminum nitride
Author(s) -
Nai-Kuei Kuo,
Chengjie Zuo,
Gianluca Piazza
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3213345
Subject(s) - microscale chemistry , materials science , band gap , center frequency , lattice constant , wide bandgap semiconductor , nitride , acoustic wave , low frequency , cylinder , optoelectronics , acoustics , optics , composite material , physics , diffraction , band pass filter , mechanical engineering , mathematics education , mathematics , layer (electronics) , astronomy , engineering
This work presents the design and demonstration of a microscale inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) with a frequency stop band for bulk acoustic waves in the very high frequency range. Conversely to conventional microscale acoustic band gaps, the IABG is formed by a two-dimensional periodic array of unit cells consisting of a high acoustic velocity material cylinder surrounded by a low acoustic velocity medium. The periodic arrangement of the IABG array induces scattering of incident acoustic waves and generates a stop band, whose center frequency is primarily determined by the lattice constant of the unit cell and whose bandwidth depends on the cylinder radius, the film thickness, and the size of the tethers that support the cylinder. A wide band gap (>13% of the center frequency) is formed by the IABG even when thin AlN films are used. The experimental response of an IABG structure having a unit cell of 8.6 μm and an AlN film thickness of 2 μm confirms the existence of a...
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